Back-End-of-Line Nano-Electro-Mechanical Switches for Reconfigurable Interconnects

Non-volatile (NV) nano-electro-mechanical (NEM) switches are successfully implemented using multiple metallic layers in a standard 65 nm CMOS back-end-of-line (BEOL) process with no additional lithography steps. Non-volatile operation of a NEM switch as a reconfigurable interconnect to dynamically change CMOS circuit functionality is demonstrated.