Tellurium (Te) has recently been rediscovered as an attractive semiconducting material for a wide range of electronic and optoelectronic applications. However, thermal instability of Te-based devices has not been investigated and introduces major drawbacks for their practical applications. Toward this goal, this work explores the influence of annealing temperatures on Te transistors and their two failure mechanisms, related to the sublimation of the Te channel and the degradation of the contacts. To overcome these challenges, we fabricated a Te device that is graphene-contacted and SiOx...