Two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS2), are emerging as key materials for next-generation electronics, addressing challenges in the miniaturization of silicon-based technologies. Despite progress in scaling-up 2D materials, integrating them into functional devices remains challenging, particularly in the context of three-dimensional integration. Here, we present a scalable method for growing high-quality mono- to few-layer MoS2 on large wafers using a spin-on precursor, molybdenum ethyl xanthate. This approach facilitates the formation of a metastable...
